AO4440 Просмотр технического описания (PDF) - Alpha and Omega Semiconductor
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AO4440 Datasheet PDF : 4 Pages
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AO4440
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4440 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO4440 is Pb-free
(meets ROHS & Sony 259 specifications). AO4440L
is a Green Product ordering option. AO4440 and
AO4440L are electrically identical
Features
VDS (V) = 60V
ID = 5A (VGS = 10V)
RDS(ON) < 55mΩ (VGS = 10V)
RDS(ON) < 75mΩ (VGS = 4.5V)
S
D
S
D
S
D
G
D
SOIC-8
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
ID
Pulsed Drain Current B
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
60
±20
5
4
20
2.5
1.6
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
RθJA
38
69
Maximum Junction-to-Lead C
Steady-State
RθJL
24
Max
50
80
30
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
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