DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

AMMC-5618-W50 Просмотр технического описания (PDF) - Avago Technologies

Номер в каталоге
Компоненты Описание
производитель
AMMC-5618-W50
AVAGO
Avago Technologies AVAGO
AMMC-5618-W50 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Agilent AMMC-5618
6 - 20 GHz Amplifier
Data Sheet
Chip Size:
920 x 920 µm (36.2 x 36.2 mils)
Chip Size Tolerance:± 10µm (± 0.4 mils)
Chip Thickness: 100 ± 10µm (4 ± 0.4 mils)
Pad Dimensions: 80 x 80 µm (3.1 x 3.1 mils or larger)
Description
Agilent’s AMMC- 5618 620 GHz
MMIC is an efficient two- stage
amplifier designed to be used as
a cascadable intermediate gain
block for EW applications. In
communication systems, it can
be used as a LO buffer, or as a
transmit driver amplifier. It is
fabricated using a PHEMT
integrated circuit structure that
provides exceptional efficiency
and flat gain performance.
During typical operation with a
single 5- V supply, each gain
stage is biased for Class- A
operation for optimal power
output with minimal distortion.
The RF input and output have
matching circuitry for use in
50- environments. The
backside of the chip is both RF
and DC ground. This helps
simplify the assembly process
and reduces assembly related
performance variations and
costs. The MMIC is a cost
effective alternative to hybrid
(discrete FET) amplifiers that
require complex tuning and
assembly processes.
Features
Frequency Range: 6 20 GHz
• High Gain: 14.5 dB Typical
• Output Power: 19.5 dBm Typical
• Input and Output Return Loss: < -12
dB
Flat Gain Response: ± 0.3 dB Typical
• Single Supply Bias: 5 V @ 107 mA
Applications
• Driver/Buffer in microwave
communication systems
• Cascadable gain stage for EW
systems
• Phased array radar and transmit
amplifiers
AMMC-5618 Absolute Maximum Ratings [1]
Symbol Parameters/Conditions
Units Min. Max.
VD1,VD2 Drain Supply Voltage
V
7
VG1
Optional Gate Voltage
V
-5
+1
VG2
Optional Gate Voltage
V
-5
+1
ID1
Drain Supply Current
mA
70
ID2
Drain Supply Current
mA
84
Pin
RF Input Power
dBm
20
Tch
Channel Temp.
°C
+150
Tb
Operating Backside Temp.
°C
-55
Tstg
Storage Temp.
°C
-65 +165
Tmax
Maximum Assembly Temp. (60 sec max) °C
+300
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
Note: These devices are ESD sensitive. The following precautions are strongly recommended:
Ensure that an ESD approved carrier is used when dice are transported from one destination to another.
Personal grounding is to be worn at all times when handling these devices.

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]