AMMC-6241 Просмотр технического описания (PDF) - Avago Technologies
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AMMC-6241 Datasheet PDF : 8 Pages
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AMMC-6241 DC Specifications/Physical Properties [1]
Symbol
Id
qch-b
Parameters and Test Conditions
Drain Supply Current (under any RF power drive and temperature) (Vd=3.0 V)
Thermal Resistance[2] (Backside temperature, Tb = 25°C)
Units Min. Typ. Max.
mA
60 80
°C/W
25
AMMC-6241 RF Specifications [3, 4, 5]
TA= 25°C, Vd=3.0 V, Id(Q)=60 mA, Zin=Zo=50 Ω
Symbol Parameters andTest Conditions Units Minimum
Gain
Small-signal Gain[6]
dB 26-35 GHz = 20
35-40 GHz = 18.5
NF
Noise Figure into 50W
dB
P-1dB
OIP3
RLin
RLout
Isol
Output Power at 1dBGain Com- dBm
pression
Third Order Intercept Point;
dBm
Df=100MHz; Pin=-35dBm
Input Return Loss[6]
dB
Output Return Loss[6]
dB
Reverse Isolation[6]
dB
Typical
26-37 GHz = 21
37-40 GHz = 19.5
26-37 GHz = 2.7
37-40 GHz = 3.0
+10
+20
-13
-16
-40
Maximum
26-37 GHz = 3.0
37-40 GHz = 3.3
-11
-12
Sigma
1.0
0.05
0.40
0.50
0.50
Notes:
1. Ambient operational temperature TA=25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (θch-b) = 26°C/W at Tchannel (Tc) = 34°C as measured using infrared microscopy. Thermal Resistance at
backside temperature (Tb) = 25°C calculated from measured data.
3. Small/Large -signal data measured in wafer form TA = 25°C.
4. 100% on-wafer RF test is done at frequency =30, 32, and 38 GHz.
5. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may be improved over a
more narrow bandwidth by application of additional conjugate, linearity, or low noise (Gopt) matching.
6. As derived from measured s-parameters
USL
LSL
USL
2.6
2.7
2.8
2.9
19
20
2.8 2.9
3
3.1 3.2 3.3
Noise Figure at 32 GHz
Gain at 38 GHz
Noise Figure at 38GHz
Typical distribution of Small Signal Gain, Noise Figure, and Return Loss. Based on 1500 part sampled over several
production lots.
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