DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

AMMC-5026 Просмотр технического описания (PDF) - HP => Agilent Technologies

Номер в каталоге
Компоненты Описание
производитель
AMMC-5026
HP
HP => Agilent Technologies HP
AMMC-5026 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Agilent AMMC-5026
2–35 GHz GaAs MMIC
Traveling Wave Amplifier
Data Sheet
Chip Size:
Chip Size Tolerance:
Chip Thickness:
Pad Dimensions:
3050 x 840 µm (119 x 33 mils)
±10 µm (±0.4 mils)
100 ± 10 µm (4 ± 0.4 mils)
75 x 75 µm (2.9 ± 0.4 mils)
Features
• Frequency range: 2 – 35 GHz
• Gain: 10.5 dB
• Gain flatness: ± 0.8 dB
• Return loss:
Input 17 dB, Output: 15 dB
• Output power (P-1dB):
24 dBm at 10 GHz
23 dBm at 20 GHz
22 dBm at 26 GHz
• Noise figure (6–19 GHz): 4 dB
Applications
• Broadband gain block
• Broadband driver amplifier
• 10 Gb/s Fiber Optics
Description
The AMMC-5026 is a broadband
PHEMT GaAs MMIC Traveling
Wave Amplifier (TWA) designed
for medium output power and
high gain over the full 2 GHz to
35 GHz frequency range. The
design employs a 6-section
cascode connected FET structure
to provide flat gain and medium
power as well as uniform group
delay.
Absolute Maximum Ratings[1]
Symbol Parameters/Conditions
Units
Min.
Max.
Vdd
Positive Drain Voltage
V
10
Idd
Total Drain Current
mA
450
Vg1
First Gate Voltage
V
-5
Ig1
First Gate Current
mA
-9
+5
Vg2
Second Gate Voltage
V
-3
+3.5
Ig2
Second Gate Current
mA
-10
Pin
CW Input Power
dBm
23
Tch
Channel Temperature
°C
+150
Tb
Operating Backside Temperature
°C
-55
Tstg
Storage Temperature
°C
-65
+165
Tmax
Max. Assembly Temp (60 sec max)
°C
+300
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]