AM55-0004 Просмотр технического описания (PDF) - Tyco Electronics
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производитель
AM55-0004 Datasheet PDF : 8 Pages
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250 mW Linear Power Amplifier and T/R Switch
AM55-0004
Recommended PCB Configuration
Layout View
Cross-Section View
0.700 in.
Pin 1
C1
C6
C9
0.490 in.
C5
C8
C4
C10 R3 C2 R2
R1
C3
C7
RF Traces + Components
RF Ground
DC Routing
Customer Defined
The PCB dielectric between RF traces and RF ground layers
should be chosen to reduce RF discontinuities between
50-Ω lines and package pins. M/A-COM recommends an
FR-4 dielectric thickness of 0.008 in. (0.2 mm), yielding a
50-Ω line width of 0.015 in. (0.38 mm). The recommended
metalization thickness is 1 oz. copper.
Shaded traces are vias to DC routing layer and traces on DC
routing layer.
External Circuitry Parts List
Label
C1 - C5
C6 - C8
C9
C10
R1
R2
R3
Tline
Value
1000 pF
68 pF
1.5 pF
15 pF
2.7 k Ω
1.5 k Ω
150 Ω
0.250 in. long
Purpose
Low frequency bypass
RF bypass
Output power tuning
Reduces low frequency gain
Voltage divider to VG2
Voltage divider to VG2
Reduces low frequency gain
Power match
Biasing Procedure
The AM55-0004 requires that VGG bias be applied prior to
any VDD bias. Permanent damage may occur if this
procedure is not followed. All FETs in the PA will draw
excessive current and damage internal circuitry.
All off-chip components are low-cost surface mount components obtainable from
multiple sources. (0.020 in. x 0.040 in. or 0.030 in. x 0.050 in.)
External Circuitry
VSW
Tx IN
ANT IN/OUT
Rx OUT
VDD1
Save Tx
C8
C5
C4
1
28
2
27
3
26
4
25
5
24
6
23
7
22
8
21
9
20
10
19
11
18
12
17
13
16
14
15
C1 C6
TLine
C10
C9
R1
R3
C2
R2
C3
C7
VSW
VDD2
PA OUT
VG2
VG1
PA IN
Specifications Subject to Change Without Notice
V 2.00
M/A-COM Inc.
s
1011 Pawtucket Boulevard, Lowell, MA 01853 USA
s
Telephone: 800-366-2266
6
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