AM29LV160MT70RFI Просмотр технического описания (PDF) - Advanced Micro Devices

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AM29LV160MT70RFI

16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit™ 3.0 Volt-only Boot Sector Flash Memory

Advanced Micro Devices 

Data Sheet

General Description

The Am29LV160M is a 16 Mbit, 3.0 Volt-only Flash memory organized as

2,097,152 bytes or 1,048,576 words. The device is offered in a 48-ball Fine-pitch

BGA, 64-ball Fortified BGA, and 48-pin TSOP packages. The word-wide data (x16)

appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. The de-

vice requires only a single 3.0 volt power supply for both read and write

functions, designed to be programmed in-system with the standard system 3.0

volt VCC supply. The device can also be programmed in standard

EPROM programmers.

The device offers access times of 70, 85, 90, and 100 ns. To eliminate bus conten-

tion the device contains separate chip enable (CE#), write enable (WE#) and

output enable (OE#) controls.

The device is entirely command set compatible with the JEDEC single-power-

supply Flash standard. Commands are written to the device using standard

microprocessor write timing. Write cycles also internally latch addresses and data

needed for the programming and erase operations.

The sector erase architecture allows memory sectors to be erased and repro-

grammed without affecting the data contents of other sectors. The device is fully

erased when shipped from the factory.

Device programming and erasure are initiated through command sequences.

Once a program or erase operation starts, the host system need only poll the

DQ7 (Data# Polling) or DQ6 (toggle) status bits or monitor the Ready/Busy#

(RY/BY#) output to determine whether the operation is complete. To facilitate

programming, an Unlock Bypass mode reduces command sequence overhead

by requiring only two write cycles to program data instead of four.

Hardware data protection measures include a low VCC detector that automati-

cally inhibits write operations during power transitions. The hardware sector

protection feature disables both program and erase operations in any combina-

tion of sectors of memory. This can be achieved in-system or via programming

equipment.

The Erase Suspend/Erase Resume feature allows the host system to pause an

erase operation in a given sector to read or program any other sector and then

complete the erase operation. The Program Suspend/Program Resume fea-

ture enables the host system to pause a program operation in a given sector to

read any other sector and then complete the program operation.

The hardware RESET# pin terminates any operation in progress and resets the

device, after which it is then ready for a new operation. The RESET# pin may be

tied to the system reset circuitry. A system reset would thus also reset the de-

vice, enabling the host system to read boot-up firmware from the Flash memory

device.

The device reduces power consumption in the standby mode when it detects

specific voltage levels on CE# and RESET#, or when addresses are stable for a

specified period of time.

The Secured Silicon Sector provides a 128-word/256-byte area for code or

data that can be permanently protected. Once this sector is protected, no further

changes within the sector can occur.

MirrorBit flash technology combines years of Flash memory manufacturing expe-

rience to produce the highest levels of quality, reliability and cost effectiveness.

The device electrically erases all bits within a sector simultaneously via hot-hole

assisted erase. The data is programmed using hot electron injection.

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Am29LV160M

25974B5 January 31, 2007

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