FRF150H Просмотр технического описания (PDF) - Intersil
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FRF150H Datasheet PDF : 6 Pages
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FRF150D, FRF150R, FRF150H
Post-Radiation Electrical Specifications TC = +25oC, Unless Otherwise Specified
LIMITS
PARAMETER
SYMBOL
TYPE
TEST CONDITIONS
MIN
MAX
UNITS
Drain-Source
(Note 4, 6)
BVDSS FRF150D, R VGS = 0, ID = 1mA
100
-
V
Breakdown Volts
(Note 5, 6)
BVDSS FRF150H
VGS = 0, ID = 1mA
95
-
V
Gate-Source
(Note 4, 6)
VGS(th) FRF150D, R VGS = VDS, ID = 1mA
2.0
4.0
V
Threshold Volts
(Note 3, 5, 6) VGS(th) FRF150H
VGS = VDS, ID = 1mA
1.5
4.5
V
Gate-Body
(Note 4, 6)
IGSSF FRF150D, R VGS = 20V, VDS = 0
-
Leakage Forward
(Note 5, 6)
IGSSF FRF150H
VGS = 20V, VDS = 0
-
100
nA
200
nA
Gate-Body
(Note 2, 4, 6) IGSSR FRF150D, R VGS = -20V, VDS = 0
-
Leakage Reverse
(Note 2, 5, 6) IGSSR FRF150H
VGS = -20V, VDS = 0
-
100
nA
200
nA
Zero-Gate Voltage (Note 4, 6)
IDSS
FRF150D, R VGS = 0, VDS = 80V
-
Drain Current
(Note 5, 6)
IDSS
FRF150H
VGS = 0, VDS = 80V
-
25
µA
100
µA
Drain-Source
(Note 1, 4, 6) VDS(on) FRF150D, R VGS = 10V, ID = 25A
-
1.84
V
On-State Volts
(Note 1, 5, 6) VDS(on) FRF150H
VGS = 16V, ID = 25A
-
2.76
V
Drain-Source
(Note 1, 4, 6) RDS(on) FRF150D, R VGS = 10V, ID = 20A
-
0.07
Ω
On Resistance
(Note 1, 5, 6) RDS(on) FRF150H
VGS = 14V, ID = 20A
-
0.105
Ω
NOTES:
1. Pulse test, 300µs max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 3E13
5. Gamma = 1000KRAD(Si). Neutron = 3E13
6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 11/16/89 on TA 17651 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, Intersil Application note AN-8831, Oct. 1988
4-3
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