AM27C010-150 Просмотр технического описания (PDF) - Advanced Micro Devices
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AM27C010-150 Datasheet PDF : 13 Pages
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CE# should be decoded and used as the primary de-
vice-selecting function, while OE# be made a common
connection to all devices in the array and connected to
the READ line from the system control bus. This as-
sures that all deselected memory devices are in their
low-power standby mode and that the output pins are
only active when data is desired from a particular mem-
ory device.
System Applications
During the switch between active and standby condi-
tions, transient current peaks are produced on the ris-
ing and falling edges of Chip Enable. The magnitude of
these transient current peaks is dependent on the out-
put capacitance loading of the device. At a minimum, a
0.1 µF ceramic capacitor (high frequency, low inherent
inductance) should be used on each device between
VCC and VSS to minimize transient effects. In addition,
to overcome the voltage drop caused by the inductive
effects of the printed circuit board traces on EPROM ar-
rays, a 4.7 µF bulk electrolytic capacitor should be used
between VCC and VSS for each eight devices. The loca-
tion of the capacitor should be close to where the
power supply is connected to the array.
MODE SELECT TABLE
Mode
CE#
OE#
PGM#
A0
Read
VIL
VIL
X
X
Output Disable
X
VIH
X
X
Standby (TTL)
VIH
X
X
X
Standby (CMOS)
VCC ± 0.3 V
X
X
X
Program
VIL
VIH
VIL
X
Program Verify
VIL
VIL
VIH
X
Program Inhibit
VIH
X
X
X
Autoselect Manufacturer Code
VIL
(Note 3)
Device Code
VIL
VIL
X
VIL
VIL
X
VIH
Notes:
1. VH = 12.0 V ± 0.5 V.
2. X = Either VIH or VIL.
3. A1–A8 and A10–16 = VIL
4. See DC Programming Characteristics for VPP voltage during programming.
A9
VPP
Outputs
X
X
DOUT
X
X
High Z
X
X
High Z
X
X
High Z
X
VPP
DIN
X
VPP
DOUT
X
VPP
High Z
VH
X
01h
VH
X
0Eh
6
Am27C010
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