UPD43256BGU-A85-A Просмотр технического описания (PDF) - NEC => Renesas Technology

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UPD43256BGU-A85-A

256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT 85ns

NEC => Renesas Technology 

DATA SHEET

MOS INTEGRATED CIRCUIT

μPD43256B

256K-BIT CMOS STATIC RAM

32K-WORD BY 8-BIT

Description

The μPD43256B is a high speed, low power, and 262,144 bits (32,768 words by 8 bits) CMOS static RAM.

Battery backup is available. And A and B versions are wide voltage operations.

The μPD43256B is packed in 28-pin PLASTIC DIP, 28-pin PLASTIC SOP and 28-pin PLASTIC TSOP (I) (8 x 13.4 mm).

Features

• 32,768 words by 8 bits organization

• Fast access time: 70, 85, 100, 120, 150 ns (MAX.)

• Low voltage operation (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V)

• Low VCC data retention: 2.0 V (MIN.)

• /OE input for easy application

Part number

Access time Operating supply Operating ambient

Supply current

ns (MAX.)

voltage

V

temperature

°C

At operating

mA (MAX.)

At standby At data retention

μA (MAX.) μA (MAX.) Note1

μPD43256B-xxL

70, 85

4.5 to 5.5

0 to 70

45

50

3

μPD43256B-xxLL

15

2

μPD43256B-Axx

μPD43256B-Bxx Note2

85, 100 , Note2 120 Note2

100, 120, 150

3.0 to 5.5

2.7 to 5.5

Notes 1. TA ≤ 40 °C, VCC = 3.0 V

2. Access time: 85 ns (MAX.) (VCC = 4.5 to 5.5 V)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. M10770EJEV0DS00 (14th edition)

Date Published June 2006 NS CP (K)

Printed in Japan

1990, 1993, 1994

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