AS5SS256K18 Просмотр технического описания (PDF) - Austin Semiconductor

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AS5SS256K18

256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through

Austin Semiconductor 

Austin Semiconductor, Inc.

SSRAM

AS5SS256K18

IDD ELECTRICAL CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS

(-55oC < TA < +125oC and -40oC<TA<+85oC; VDD = +3.3V +0.3V/-0.165V unless otherwise noted)

PARAMETER

Power Supply Current:

Operating

Power Supply Current:

Idle

CMOS Standby

TTL Standby

Clock Running

CONDITIONS

Device selected; all inputs < VIL or > VIH;

Cycle time > tKC (MIN); VDD = MAX; Outputs Open

SYM

IDD

Device selected; VDD = MAX; ADSC\, ADSP\,

ADV\, GW\, BWx\ > VIH; All inputs < VSS +0.2 or

> VDDQ -0.2; Cycle time > tKC (MIN);

IDD1

Outputs Open

Device deselected; VDD = MAX;

All inputs < Vss +0.2 or > VDDQ -0.2;

ISB2

All inputs static; CLK frequency =0

Device deselected; VDD = MAX;

All inputs < VIL or > VIH;

ISB3

All inputs static; CLK frequency = 0

Device deselected; VDD = MAX;

ASDP\, ADV\, GW\, BWx\ > VIH;

ISB4

All inputs < VSS +0.2 or > VDDQ -0.2;

Cycle time > tKC (MIN)

MAX

-8 -9 -10 UNITS NOTES

375 325 250 mA 2, 3, 4

100 85 65 mA 2, 3, 4

10 10 10 mA 3, 4

25 25 25 mA 3, 4

100 85 65 mA 3, 4

NOTES:

1. VDDQ = +3.3V +0.3V/-0.165V for 3.3V I/O configuration.

2. IDD is specified with no output current and increases with faster cycle times. IDDQ increases with faster cycle

times and greater output loading.

3. “Device deselected” means device is in power-down mode as defined in the truth table. “Device selected” means

device is active (not in power-down mode).

4. Typical values are measured at 3.3V, 25°C and 15ns cycle time.

AS5SS256K18

Rev. 2.1 06/05

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

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