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производитель

HYB314171BJ

3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh

Siemens AG 

HYB 314171BJ/BJL-50/-60/-70

3.3V 256 K x 16-DRAM

Parameter

Symbol

Limit Values

Unit Note

-50

- 60

- 70

min. max. min. max. min. max.

Fast Page Mode Read Modify Write Cycle

Fast page mode read/write cycle tPRWC 80 –

90 –

100 –

ns

time

CAS precharge to WE delay time tCPWD 55 –

60 –

65 –

ns

CAS before RAS refresh Cycle

CAS setup time

CAS hold tim

RAS to CAS precharge time

Write to RAS precharge time

Write to RAS hold time

tCSR

5

–

5

–

5

–

ns

tCHR

10 –

10 –

10 –

ns

tRPC

0

–

0

–

0

–

ns

tWRP

10 –

10 –

10 –

ns

tWRH

10 –

10 –

10 –

ns

CAS-before RAS counter test cycle

CAS precharge time

tCPT

25 –

30 –

40 –

ns

Self Refresh Cycle (L-Version only)

RAS pulse width

RAS precharge time

CAS hold time Self Refresh

tRASS

100 –

100 –

100 –

µs

tRPS

95 –

110 –

130 –

ns

tCHS

35 –

40 –

50 –

ns

Semiconductor Group

9

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