HYB314171BJ Просмотр технического описания (PDF) - Siemens AG
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HYB314171BJ Datasheet PDF : 24 Pages
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HYB 314171BJ/BJL-50/-60/-70
3.3V 256 K x 16-DRAM
Absolute Maximum Ratings
Operating temperature range ........................................................................................ 0 to + 70 °C
Storage temperature range..................................................................................... – 55 to + 150 °C
Input/output voltage .................................................................................... – 1 to (VCC + 0.5, 4.6) V
Power supply voltage.................................................................................................. – 1 to + 4.6 V
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
TA = 0 to 70 °C; VSS = 0 V; VCC = 3.3 V ± 0.3 V, tT = 5 ns
Parameter
Input high voltage
Input low voltage
LVTTL Output high voltage (IOUT = – 2.0 mA)
LVTTL Output low voltage (IOUT = 2 mA)
LVCMOS Output high voltage (IOUT = – 100 µA)
LVCMOS Output low voltage (IOUT = 100 µA)
Input leakage current, any input
(0 V < VIN < VCC + 0.3 V, all other inputs = 0 V)
Output leakage current
(DO is disabled, 0 V < VOUT < VCC + 0.3 V )
Average VCC supply current:
-50 version
-60 version
-70 version
Symbol
Limit Values
min.
max.
VIH
2.0
VCC + 0.5
VIL
– 1.0 0.8
VOH
2.4
–
VOL
–
0.4
VOH
2.4
–
VOL
–
0.4
II(L)
– 10
10
IO(L)
– 10
10
ICC1
–
125
105
85
Unit Notes
V1
V1
V1
V1
V1
V1
µA 1
µA 1
mA 2, 3, 4
Standby VCC supply current
(RAS = LCAS = UCAS = WE = VIH)
Average VCC supply current during
RAS-only refresh cycles:
-50 version
-60 version
-70 version
ICC2
–
–
ICC3
2
mA
2, 4
125
mA
105
85
Semiconductor Group
5
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