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ALD1115MAL Просмотр технического описания (PDF) - Advanced Linear Devices

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Компоненты Описание
производитель
ALD1115MAL
ALD
Advanced Linear Devices ALD
ALD1115MAL Datasheet PDF : 6 Pages
1 2 3 4 5 6
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, VDS
Gate-source voltage, VGS
Power dissipation
Operating temperature range PA, SA package
DA package
Storage temperature range
Lead temperature, 10 seconds
OPERATING ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified
Parameter
N - Channel
Symbol Min Typ Max Unit
Test
Conditions
Gate Threshold VT
Voltage
0.4 0.7 1.0 V
IDS = 1µA VGS = VDS
Gate Threshold
Temperature TCVT
-1.2
mV/°C
Drift
On Drain
Current
IDS (ON) 3 4.8
mA
VGS = VDS = 5V
Trans-.
Gfs
conductance
1 1.8
mmho VDS = 5V IDS= 10mA
Output
Conductance
GOS
200
µmho VDS = 5V IDS = 10mA
Drain Source RDS(ON)
ON Resistance
350 500
VDS = 0.1V VGS = 5V
Drain Source
Breakdown
Voltage
BVDSS 12
V
IDS = 1µA VGS =0V
Off Drain
Current
IDS(OFF)
Gate Leakage IGSS
Current
Input
Capacitance
CISS
10 400 pA
4 nA
0.1 30 pA
1 nA
1
3 pF
VDS =12V IGS = 0V
TA = 125°C
VDS = 0V VGS =12V
TA = 125°C
13.2V
13.2V
500 mW
0°C to +70°C
-55°C to +125°C
-65°C to +150°C
+260°C
P - Channel
Min Typ Max Unit
-0.4 -0.7 -1.0 V
Test
Conditions
IDS = -1µA VGS = VDS
-1.3
mV/°C
-1.3 -2
mA
VGS = VDS = -5V
0.25 0.67
mmho VDS = -5V IDS= -10mA
40
µmho VDS = -5V IDS = -10mA
1200 1800
VDS = -0.1V VGS = -5V
-12
V
IDS = -1µA VGS =0V
10 400 pA
4 nA
1 30 pA
1 nA
1
3 pF
VDS = -12V VGS = 0V
TA = 125°C
VDS = 0V VGS =-12V
TA = 125°C
ALD1115
Advanced Linear Devices
2

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