ALD1102(1998) Просмотр технического описания (PDF) - Advanced Linear Devices

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ALD1102
(Rev.:1998)

DUAL P-CHANNEL MATCHED MOSFET PAIR

Advanced Linear Devices 

TYPICAL PERFORMANCE CHARACTERISITCS

OUTPUT CHARACTERISTICS

-80

VBS = 0V

TA = 25°C

-60

VGS = -12V

-10V

-40

-8V

-6V

-20

-4V

-2V

0

0

-2

-4

-6

-8

-10 -12

DRAIN - SOURCE VOLTAGE (V)

LOW VOLTAGE OUTPUT

CHARACTERISTICS

4

VBS = 0V

VGS = -12V

TA = 25°C

2

-6V

-4V

-2V

0

-2

-4

-320

-160

0

160

320

DRAIN -SOURCE VOLTAGE (mV)

10000

5000

FORWARD TRANSCONDUCTANCE

vs. DRAIN - SOURCE VOLTAGE

VBS = 0V

f = 1KHz

IDS = -5mA

2000

1000

500

200

TA = +25°C

IDS = -1mA

TA = +125°C

100

0

-2

-4

-6

-8

-10 -12

DRAIN - SOURCE VOLTAGE (V)

TRANSFER CHARACTERISTIC

WITH SUBSTRATE BIAS

-20

VBS = 0V

-15

2V

4V

6V

8V

10V

12V

-10

-5

0

0

VGS = VDS

TA = 25°C

-0.8

-1.6

-2.4

-3.2

-4.0

GATE - SOURCE VOLTAGE (V)

RDS (ON) vs. GATE - SOURCE VOLTAGE

10000

1000

VDS = 0.4V

VBS = 0V

TA = +125°C

-10X10-6

OFF DRAIN - CURRENT vs.

TEMPERATURE

VDS = -12V

VGS = VBS = 0V

-10X10-9

100

TA = +25°C

10

0

-2

-4

-6

-8

-10 -12

-10X10-12

-50 -25

0 +25 +50 +75 +100 +125

GATE - SOURCE VOLTAGE (V)

ALD1102A/ALD1102B

Advanced Linear Devices

ALD1102

TEMPERATURE (°C)

3

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