AH115-S8G(2006) Просмотр технического описания (PDF) - WJ Communications => Triquint
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AH115-S8G Datasheet PDF : 5 Pages
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AH115
½ Watt, High Linearity InGaP HBT Amplifier
The Communications Edge TM
Product Information
Product Features
x 1800 – 2300 MHz
x +28.5 dBm P1dB
x +44 dBm Output IP3
x 14 dB Gain @ 1960 MHz
x +5V Single Positive Supply
x MTTF > 100 Years
x Lead-free/green/RoHS-compliant
SOIC-8 SMT Pkg.
Applications
x Final stage amplifiers for Repeaters
x Mobile Infrastructure
Product Description
Functional Diagram
The AH115 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve high performance for various narrow-band
tuned application circuits with up to +44 dBm OIP3 and
+28.5 dBm of compressed 1-dB power. All devices are
100% RF and DC tested. The AH115 is available in lead-
free/green/RoHS-compliant SOIC-8 package.
The product is targeted for use as driver amplifiers for
wireless infrastructure where high linearity and medium
power is required. The internal active bias allows the
AH115 to maintain high linearity over temperature and
operate directly off a +5 V supply. This combination
makes the device an excellent fit for transceiver line
cards and power amplifiers in current and next generation
multi-carrier 3G base stations.
1
8
2
7
3
6
4
5
Function
Vref
Input
Output
Vbias
GND
N/C or GND
Pin No.
1
3
6, 7
8
Backside Paddle
2, 4, 5
Specifications (1)
Typical Performance (4)
Parameters
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
IS-95A Channel Power
@ -45 dBc ACPR, 1960 MHz
wCDMA Channel Power
@ -45 dBc ACLR, 2140 MHz
Noise Figure
Operating Current Range (3)
Device Voltage
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
Min
1800
12.5
+26.5
+41
dBm
dB
mA 200
V
Typ
2140
14.4
23
8
+28.5
+42
+22.5
+20
5.3
250
+5
Max
2300
300
1. Test conditions unless otherwise noted. 25 ºC, Vsupply = +5 V in tuned application circuit.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions. It is
expected that the current can increase up to 300mA at P1dB.
Parameters
Frequency
Gain
S11
S22
Output P1dB
Output IP3 (2)
IS-95A Channel Power
@ -45 dBc ACPR,
wCDMA Channel Power
@ -45 dBc ACLR
Noise Figure
Supply Bias
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
Typical
1960
2140
14.3
14.4
-12
-23
-8
-8
+28.3
+28.5
+44
+42
+22.5
+20
5
5.3
+5 V @ 250 mA
¡
4. Typical parameters reflect performance in a tuned application circuit at +25 C.
Absolute Maximum Rating
Parameter
Rating
Operating Case Temperature
-40 to +85 qC
Storage Temperature
-65 to +150 qC
RF Input Power (continuous)
+22 dBm
Device Voltage
+8 V
Device Current
400 mA
Device Power
2W
Junction Temperature
+250 qC
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No.
AH115-S8G
AH115-S8PCB1960
AH115-S8PCB2140
Description
½ Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
1960 MHz Evaluation Board
2140 MHz Evaluation Board
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 1 of 5 April 2006
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