ECP050G Просмотр технического описания (PDF) - Unspecified
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ECP050G Datasheet PDF : 7 Pages
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AH115 / ECP050G
½ Watt, High Linearity InGaP HBT Amplifier
The Communications Edge TM
Product Information
Product Features
Product Description
Functional Diagram
x 1800 – 2300 MHz
x +28.5 dBm P1dB
x +44 dBm Output IP3
x 14 dB Gain @ 1960 MHz
x +5V Single Positive Supply
x MTTF > 100 Years
x Lead-free/green/RoHS-compliant
SOIC-8 SMT Pkg.
Applications
x Mobile Infrastructure
x Final Stage Amplifier for
Repeaters
Specifications (1)
The AH115 / ECP050 is a high dynamic range driver
amplifier in a low-cost surface mount package. The
InGaP/GaAs HBT is able to achieve high performance for
various narrow-band tuned application circuits with up to
+44 dBm OIP3 and +28.5 dBm of compressed 1-dB power.
All devices are 100% RF and DC tested. The AH115 /
ECP050 is available in lead-free/green/RoHS-compliant
SOIC-8 package.
The product is targeted for use as driver amplifiers for
wireless infrastructure where high linearity and medium
power is required. The internal active bias allows the
AH115 / ECP050 to maintain high linearity over
temperature and operate directly off a +5 V supply. This
combination makes the device an excellent fit for
transceiver line cards and power amplifiers in current and
next generation multi-carrier 3G base stations.
1
2
3
4
Function
Vref
Input / Base
Output / Collector
Vbias
GND
N/C or GND
Typical Performance (1)
8
7
6
5
Pin No.
1
3
6, 7
8
Backside
Paddle
2, 4, 5
Parameters
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
IS-95A Channel Power
@ -45 dBc ACPR, 1960 MHz
W-CDMA Channel Power
@ -45 dBc ACLR, 2140 MHz
Noise Figure
Operating Current Range (3)
Device Voltage
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
mA
V
Min
1800
12.5
+26.5
+41
200
Typ
2140
14.4
23
8
+28.5
+42
+22.5
+20
5.3
250
+5
Max
2300
300
1. Test conditions unless otherwise noted. 25ºC, Vsupply = +5 V in tuned application circuit.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions. It is
expected that the current can increase up to 300mA at P1dB.
Parameters
Frequency
Gain
S11
S22
Output P1dB
Output IP3 (2)
IS-95A Channel Power
@ -45 dBc ACPR,
W-CDMA Channel Power
@ -45 dBc ACLR
Noise Figure
Supply Bias
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
Typical
1960
2140
14.3
14.4
-12
-23
-8
-8
+28.3
+28.5
+44
+42
+22.5
+20
5
5.3
+5 V @ 250 mA
Absolute Maximum Rating
Ordering Information
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Junction Temperature
Rating
-40 to +85 qC
-65 to +150 qC
+22 dBm
+8 V
400 mA
2W
+250 qC
Part No.
AH115-S8
ECP050G
AH115-S8G
AH115-S8PCB1960
AH115-S8PCB2140
Description
½ Watt, High Linearity InGaP HBT Amplifier
(lead-tin SOIC-8 Pkg)
½ Watt, High Linearity InGaP HBT Amplifier
(lead-tin SOIC-8 Pkg)
½ Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
1960 MHz Evaluation Board
2140 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 1 of 7 May 2005
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