ADP3110 Просмотр технического описания (PDF) - ON Semiconductor

Номер в каталоге

Компоненты Описание

производитель

ADP3110

Dual Bootstrapped, 12 V MOSFET Driver with Output Disable

ON Semiconductor 

ADP3110

ABSOLUTE MAXIMUM RATINGS

Table 2.

Parameter

VCC

BST

BST to SW

SW

DC

<200 ns

DRVH

DC

<200 ns

DRVL

DC

<200 ns

IN, OD

θJA, SOIC_N

2-Layer Board

4-Layer Board

Operating Ambient Temperature

Range

Junction Temperature Range

Storage Temperature Range

Lead Temperature Range

Soldering (10 sec)

Vapor Phase (60 sec)

Infrared (15 sec)

Rating

–0.3 V to +15 V

–0.3 V to VCC + 15 V

–0.3 V to +15 V

–5 V to +15 V

–10 V to +25 V

SW – 0.3 V to BST + 0.3 V

SW – 2 V to BST + 0.3 V

–0.3 V to VCC + 0.3 V

–2 V to VCC + 0.3 V

–0.3 V to 6.5 V

123°C/W

90°C/W

0°C to 85°C

0°C to 150°C

–65°C to +150°C

300°C

215°C

260°C

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability. Unless otherwise specified all other voltages

are referenced to PGND.

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on

the human body and test equipment and can discharge without detection. Although this product features

proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy

electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance

degradation or loss of functionality.

Rev. 2 | Page 4 of 11 | www.onsemi.com

Share Link: