ADP3089 Просмотр технического описания (PDF) - Analog Devices
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ADP3089 Datasheet PDF : 4 Pages
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PRELIMINARY TECHNICAL DATA
ADP3089–SPECIFICATIONS1 (VIN = +3.3 V, TA = -40°C to +85°C, unless otherwise noted)
Parameter
Symbol
Conditions
SUPPLY
Input Voltage Range
VIN
Quiescent Current
Operating
IQ
Shutdown
Ground Current
Normal Operation
ISD
IGND2
Thermal Shutdown Threshold TSD
DRV to GND
VIN = 10 V, IL = 1 A,
DRV = GND
No load
VCOMP = 0 V
VIN = 10 V, IL = 1 A,
DRV = 2 V
OSCILLATOR
Oscillator Frequency
Minimum Sleep Duty Cycle
Maximum Duty Cycle
Wake up Hysteresis
fSW
DPSM
DMAX
VHYST
FB voltage drops below VREF
OUTPUT SWITCH
Switch On Voltage
VIO3
Current Limit Threshold
ILIM
Leakage Current
IL = 1A, FB and DRV tied to
GND
VIN = 12 V
ERROR AMPLIFIER
Reference Voltage Accuracy
Reference Voltage Line
Regulation
Feedback Input Bias Current
Maximum Output Current
Short Circuit Current
Transconductance
VREF
IFB
ICOMP, SC
ICOMP, SD
gm, EA
FB tied to COMP
FB tied to COMP,
VIN = 3 V to 12 V
soft start expired
VCOMP = 0 V, activating
shutdown
VFB to ICOMP
MODULATOR
Transconductance
Control Offset Voltage
Soft Start Time
Shutdown Threshold Voltage
Slope Compensation
gm, MOD
VPWM, OS
tSS
VCOMP, SD
mSC
VCOMP to IL
Effectively summed to ISW
NOTES
1 All limits at temperature extremes are guaranteed via correlation using standard Statistical Quality Control (SQC).
2 For higher efficiency operation, tie the DRV pin to the output for IL < 250 mA, and VIN > 3 V.
3 V(IN) - V(SW), includes voltage drop across internal current sensor.
Specifications subject to change without notice.
Min Typ Max Units
2.5
11
V
12
mA
180 280 µA
15 40
µA
3
3.6
mA
160
°C
0.75 1
14
100
20
30
1.25
40
MHz
%
%
mV
.7
1.0
V
1.5 1.7 2
A
0.5
µA
1.222 1.245 1.265 V
.02
%/V
-50 1
50
nA
35
60 85
µA
20 40
µA
480
µA/V
1
A/V
0.90
V
250 600 µs
340
750 mV
0.5
A/µs
–2–
REV. PrE
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