ADN2850(RevB) Просмотр технического описания (PDF) - Analog Devices

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Компоненты Описание

производитель

ADN2850
(Rev.:RevB)

Nonvolatile Memory, Dual 1024-Position Programmable Resistors

Analog Devices 

ADN2850

IW = I␮A

TA = 25؇C

0.5V/DIV

RWB(D)

MIDSCALE

EXPECTED

VALUE

50␮S/DIV

TPC 7. Memory Restore During Power-On Reset

5V/DIV CS

5V/DIV CLK

5V/DIV VSDI

IDD

20mA/DIV

4ms/DIV

TPC 8. IDD vs. Time (Save) Program Mode

5V/DIV CS

5V/DIV CLK

5V/DIV SDI

IDD

2mA/DIV

4ms/DIV

SUPPLY CURRENT RETURNS TO MINIMUM POWER

CONSUMPTION IF INSTRUCTION 0 (NOP) IS

EXECUTED IMMEDIATELY AFTER INSTRUCTION 1

(READ EEMEM)

TPC 9. IDD vs. Time (Read) Program Mode

100

TA = 25؇C

10

1

RWB_FS = 25k⍀

0.1

RWB_FS = 250k⍀

0.01

0

128 256 384 512 640 768

CODE – Decimal

TPC 10. IWB_MAX vs. Code

896 1024

TEST CIRCUITS

Test Circuits 1 to 3 show some of the test conditions used in the

Specifications table.

NC

DUT

A

W

B

IW

VMS

NC = NO CONNECT

Test Circuit 1. Resistor Position Nonlinearity

Error (Rheostat Operation; R-INL, R-DNL)

DUT

W

B

RSW =

0.1V

ISW

CODE = 00H

+

ISW

_ 0.1V

VSS TO VDD

Test Circuit 2. Incremental ON Resistance

NC

VDD

DUT

A

W

VSS GND B

ICM

VCM

NC

NC = NO CONNECT

Test Circuit 3. Common-Mode Leakage Current

–14–

REV. B

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