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ADN2821 Просмотр технического описания (PDF) - Analog Devices

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Компоненты Описание
производитель
ADN2821 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Preliminary Technical Data
ADN2821
ELECTRICAL SPECIFICATIONS
Table 1.
Parameter
Conditions1
DYNAMIC PERFORMANCE
Bandwidth (BW)2
Total Input RMS Noise (IRMS)2
Small Signal Trans-impedance (TZ)
Trans-impedance Ripple2
Group Delay Variation2
−3 dB
DC to 10GHz
ADN2821_2, 100 MHz
ADN2821_5, 100 MHz
ADN2821_10, 100 MHz
50 MHz to 5 GHz
50 MHz to 8 GHz
Low Frequency Cut-Off
Output Return Loss2
Total pk-pk Jitter2
Input Overload Current3, 2
Maximum Output Swing
Linear Output Range
Power Supply Noise Rejection
CLF = 1000 pF
DC to 8 GHz, differential
IIN,PK- PK = 2.0 mA, 4 dB ER
Pav, 10-12 BER, 10 dB ER
p-p diff, IIN,PK- PK = 2.5mA
p-p, < 1 dB gain compression
<10MHz
DC PERFORMANCE
Power Dissipation
Input Voltage
IIN,AVE = 0.1 mA, Vcc = 3.3 V ± 5%
Output Impedance
single-ended
PD FILTER Resistance
PD FILTER Capacitance
RSSI Sensitivity
RSSI Offset
RF
CF
IIN, AVE = 0 uA to 1 mA
IIN, AVE = 0 uA
Min Typ
8
1500
3500
6000
TBD
400
9.5
1.1
2000
5000
10000
±1
±10
15
−12
5
3.25
520
400
TBD
150
0.85
50
200
20
0.8
TBD
Max
1.3
2500
6500
15000
−10
TBD
650
200
Units
GHz
µA
V/A
V/A
V/A
dB
ps
kHz
dB
ps
dBm
mV
mV
dB
mW
V
pF
V/mA
mV
1 Min/Max Vcc = +3.3V ± 0.3V, Ta = −40°C to +95°C; Typ Vcc = 3.3V, Tambient = +25C
2 Photodiode capacitance CD = 0.22pF ± 0.04pF, Photodiode resistance = 15Ω, CB = 100pF Bond inductance LIN = LFILTER = 0.3nH ± 0.1nH; LOUT = LOUTB = 0.5nH ± 0.1nH
Load impedance = 50Ω (each output, AC coupled)
3 10-12 BER, 10dB extinction ratio, 0.85 A/W PD responsivity
Rev. PrL | Page 3 of 8

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