ADF4150BCPZ(Rev0) Просмотр технического описания (PDF) - Analog Devices
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ADF4150BCPZ Datasheet PDF : 28 Pages
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ADF4150
SPECIFICATIONS
AVDD = DVDD = SDVDD = 3.3 V ± 10%; VP = AVDD to 5.5 V; AGND = DGND = 0 V; TA = TMIN to TMAX, unless otherwise noted. The
operating temperature range is −40°C to +85°C.
Table 1.
Parameter
REFIN CHARACTERISTICS
Input Frequency
Input Sensitivity
Input Capacitance
Input Current
RF INPUT CHARACTERISTICS
RF Input Frequency (RFIN), RF Output
Buffer Disabled
RF Input Frequency (RFIN), RF Output
Buffer Disabled
RF Input Frequency (RFIN) RF Output
Buffer Enabled
RF Input Frequency (RFIN) RF Output
Buffer and Dividers Enabled
Prescaler Output Frequency
MAXIMUM PFD FREQUENCY
Fractional-N (Low Spur Mode)
Fractional-N Mode (Low Noise Mode)
Integer-N Mode
CHARGE PUMP
ICP Sink/Source
High Value
Low Value
RSET Range
ICP Leakage
Sink and Source Current Matching
ICP vs. VCP
ICP vs. Temperature
LOGIC INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current, IINH/IINL
Input Capacitance, CIN
LOGIC OUTPUTS
Output High Voltage, VOH
Output High Current, IOH
Output Low Voltage, VO
POWER SUPPLIES
AVDD
DVDD, SDVDD
VP
DIDD + AIDD2
Output Dividers
IRFOUT2
Low Power Sleep Mode
B Version
Min
Typ Max
10
250
0.7
AVDD
5.0
±60
0.5
4.0
0.5
5.0
0.5
3.5
0.5
3.0
750
26
32
32
4.65
0.29
2.7
10
1
2
1
2
1.5
0.6
±1
3.0
DVDD − 0.4
500
0.4
3.0
AVDD
3.6
AVDD
5.5
50
60
6 to 24
24
32
1
Unit
MHz
V p-p
pF
µA
GHz
GHz
GHz
GHz
MHz
MHz
MHz
MHz
mA
mA
kΩ
nA
%
%
%
V
V
µA
pF
V
µA
V
V
V
mA
mA
mA
µA
Conditions/Comments
For f < 10 MHz ensure slew rate > 21 V/µs
Biased at AVDD/21
−10 dBm ≤ RF input power ≤ +5 dBm
−5 dBm ≤ RF input power ≤ +5 dBm
−10 dBm ≤ RF input power ≤ +5 dBm
−10 dBm ≤ RF input power ≤ +5 dBm
RSET = 5.1 kΩ
VCP = VP/2
0.5 V ≤ VCP ≤ VP − 0.5 V
0.5 V ≤ VCP ≤ VP − 0.5 V
VCP = VP/2
CMOS output chosen
IOL = 500 µA
Each output divide by two consumes 6 mA
RF output stage is programmable
Rev. 0 | Page 3 of 28
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