CHA2293(2001) Просмотр технического описания (PDF) - United Monolithic Semiconductors

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CHA2293
(Rev.:2001)

24.5-29.5GHz Low Noise, Variable Gain Amplifier

United Monolithic Semiconductors 

CHA2293

24.5-29.5GHz Low Noise, Variable Gain Amplifier

GaAs Monolithic Microwave IC

Description

The CHA2293 is a high gain four-stage

monolithic low noise amplifier with variable gain.

It is designed for a wide range of applications,

from military to commercial communication

systems.The backside of the chip is both RF and

DC grounded. This helps simplify the assembly

process.

The circuit is manufactured with a PM-HEMT

process, 0.25µm gate length, via holes through

the substrate, air bridges and electron beam

gate lithography.

It is available in chip form.

Main Features

• Frequency range : 24.5-29.5GHz

• 3dB Noise Figure.

• 24dB gain

• Gain control range: 15dB

• Low DC power consumption, 160mA @ 5V

• Chip size : 2.32 X 1.23 X 0.10 mm

V5

Vd

Vg1

Vg

Vc

Typical on wafer measurements :Gain & NF

28

26

24

Gain (dB)

22

20

18

16

14

12

10

8

6

4

NF (dB)

2

0

24

25

26

27

28

29

30

Frequency (GHz)

Main Characteristics

Tamb. = 25°C

Parameter

Min Typ Max Unit

Fop

G

NF

Gctrl

Id

Operating frequency range

Small signal gain

Noise figure

Gain control range with Vc variation

Bias current

24.5

29.5 GHz

24

dB

3

3.5

dB

15

dB

150

mA

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !

Ref. : DSCHA22931201 -20-July-01

1/7

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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