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AD5535B Просмотр технического описания (PDF) - Analog Devices

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AD5535B Datasheet PDF : 16 Pages
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Data Sheet
AD5535B
SPECIFICATIONS
VPP = 215 V; V+ = 5 V; AVCC = 5.25 V; DVCC = 2.7 V to 5.25 V; PGND = AGND = DGND = DAC_GND = 0 V; REF_IN = 4.096 V;
all outputs unloaded. All specifications TMIN to TMAX, unless otherwise noted.
Table 1.
Parameter1
Min
DC PERFORMANCE3
Resolution
Integral Nonlinearity (INL)
Differential Nonlinearity (DNL)
–1
Zero Code Voltage
Output Offset Error
–1
Offset Drift
Voltage Gain
49
Gain Temperature Coefficient
Channel-to-Channel Gain Match4
–5
OUTPUT CHARACTERISTICS
Output Voltage Range3
1
Output Impedance
Resistive Load4, 5
1
Capacitive Load4
Short-Circuit Current
DC Crosstalk4
DC Power Supply Rejection (PSRR), VPP
Long-Term Drift
AC CHARACTERISTICS4
Settling Time
¼ to ¾ Scale Step
1 LSB Step
Slew Rate
–3 dB Bandwidth
30
Output Noise Spectral Density
0.1 Hz to 10 Hz Output Noise Voltage
Digital-to-Analog Glitch Impulse
Positive Transition
Negative Transition
Analog Crosstalk
Digital Feedthrough
VOLTAGE REFERENCE, REF_IN6
Input Voltage Range4
1
Input Impedance
K Grade2
Typ
Max
14
±0.1
±0.5
+1
0.5
1
+1
0.5
50
51
5
–200
+5
VPP − 1
50
200
0.55
3
4
70
0.25
Unit
Bits
% of FSR
LSB
V
V
mV/°C
V/V
ppm/°C
ppm/°C
%
V
Ω
pF
mA
LSB
dB
LSB
Test Conditions/Comments
Guaranteed monotonic
Due to DAC
Due to DAC and amplifier
Outputs at midscale,
measured over 30 days at 25°C
60
µs
No load
60
µs
200 pF load
5
µs
No load
5
µs
200 pF load
10
V/µs
No load
3
V/µs
200 pF load
kHz
4.5
µV/√Hz
Measured at 10 kHz
1
mV p-p
1 LSB change around major
carry
15
nV-sec
8
nV-sec
2.5
µV-sec
2
nV-sec
AVCC and V+ must exceed REF_IN
by 1.15 V minimum
4.096
V
60
Rev. A | Page 3 of 16

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