RMPA25000 Просмотр технического описания (PDF) - Raytheon Company

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RMPA25000

23.5-26 GHz 2 Watt Power Amplifier MMIC

Raytheon Company 

RMPA25000

23.5-26 GHz 2 Watt Power Amplifier MMIC

ADVANCED INFORMATION

Recommended

Procedure

for biasing and

operation

CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE CORRESPONDING DRAIN VOLTAGE (Vd) IS PRESENT CAN

DAMAGE THE AMPLIFIER.

The following sequence must be followed to properly test the amplifier.

Step 1: Turn off RF input power.

Step 2: Connect the DC supply grounds to the ground

of the chip carrier.

Slowly apply negative gate bias supply voltage

of -1.5 V to Vg.

Step 3: Slowly apply positive drain bias supply voltage

of +5 V to Vd.

Step 4: Adjust gate bias voltage to set the quiescent

current of Idq=1200 mA

.Step 5: After the bias condition is established, the RF

input signal may now be applied at the

appropriate frequency band.

Step 6: Follow turn-off sequence of:

(i) Turn off RF Input Power

(ii) Turn down and off drain voltage (Vd).

(iii) Turn down and off gate bias voltage(Vg).

Performance

Data

RMPA25000 S11, S21, S22 Mag Vs. Frequency

Bias Vd=5V Idq=1200 mA, T=25°C

25

20

S21

15

10

5

0

-5

-10

S11

-15

-20

-25

S22

-30

-35

-40

22 22.5 23 23.5 24 24.5 25 25.5 26 26.5 27

Frequency (GHz)

www.raytheonrf.com

Characteristic performance data and specifications are subject to change without notice.

Revised January 11, 2002

Page 4

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

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