RMPA25000 Просмотр технического описания (PDF) - Raytheon Company
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RMPA25000 Datasheet PDF : 5 Pages
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RMPA25000
23.5-26 GHz 2 Watt Power Amplifier MMIC
Application
Information
Figure 1
Functional Block
Diagram
ADVANCED INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen
environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC
Ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to
prevent static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding
to a typical 2 mil gap between the chip and the substrate material.
MMIC Chip
Drain Supply
(VDA & VDB)
RF IN
RF OUT
Ground
(Back of Chip)
Figure 2
Chip Layout and Bond
Pad Locations
(Chip Size=4.454 mm x
3.874 mm x 50 µm.
Back of Chip is RF and
DC Ground)
Dimensions in mm
3.737
Gate Supply
(VGA & VGB)
3.874
3.690
3.614
2.167
1.937
1.707
www.raytheonrf.com
0.137
0.261
0.202
0.0
0.0
0.149 0.226 0.726
1.699
2.724 2.984 3.814 4.250 4.454
Characteristic performance data and specifications are subject to change without notice.
Revised January 11, 2002
Page 2
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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