ACST4 Просмотр технического описания (PDF) - STMicroelectronics
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ACST4 Datasheet PDF : 13 Pages
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AC line transient voltage ruggedness
ACST4
Figure 7. RMS on-state current versus
ambient temperature.
Figure 8. Relative variation of thermal
impedance versus pulse duration.
IT(RMS)(A)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
α=180°
Printed circuit board FR4
Natural convection
S=0.5cm²
1.00
K = [Zth/Rth]
DPAK
IPAK
Zth(j-c)
TO-220FPAB
0.10
DPAK
IPAK
Zth(j-a)
TO-220FPAB
Tamb(°C)
50
75
tp(s)
0.01
100
125
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Figure 9.
Relative variation of gate trigger
current, holding current and
latching versus junction
temperature (typical values).
Figure 10. Relative variation of static dV/dt
versus junction temperature.
IGT, IH, IL [Tj] / IGT, IH, IL [Tj = 25°C]
3.0
dV/dt [Tj] / dV/dt [Tj = 125°C]
8
7
2.5
IGT
6
2.0
5
1.5
4
3
1.0
IL & IH
2
0.5
Tj(°C)
1
0.0
0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 25
Tj(°C)
50
75
Vout=460V
100
125
Figure 11. Relative variation of critical rate of Figure 12. Relative variation of critical rate of
decrease of main current versus
decrease of main current versus
reapplied dV/dt (typical values).
reapplied dV/dt (typical values).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
1.2
1.0
Vout=300V
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
1.2
1.0
Vout=300V
0.8
0.8
0.6
0.6
0.4
0.4
0.2
ACST4-7C
(dV/dt)c(V/µs)
0.2
ACST4-7S
(dV/dt)c(V/µs)
0.0
0
0.0
10 20 30 40 50 60 70 80 90 100
0
5
10 15 20 25 30 35 40 45 50
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