ACST4 Просмотр технического описания (PDF) - STMicroelectronics
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ACST4 Datasheet PDF : 13 Pages
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ACST4
Characteristics
Table 4. Parameter description
Parameter symbol
Parameter description
IGT
VGT
VGD
IH
IL
VTM
VTO
Rd
IDRM / IRRM
dV/dt
(dV/dt)c
Triggering gate current
Triggering gate voltage
Non-triggering gate voltage
Holding current
Latching current
Peak on-state voltage drop
On state threshold voltage
On state dynamic resistance
Maximum forward or reverse leakage current
Critical rate of rise of off-state voltage
Critical rate of rise of commutating off-state voltage
(dI/dt)c
VCL
ICL
Critical rate of decrease of commutating on-state current
Clamping voltage
Clamping current
Table 5.
Electrical characteristics
For either positive or negative polary of pin OUT voltage respect to pin COM voltage
Symbol
Test conditions
ACST4-7S ACST4-7C Unit
IGT
VGT
VGD
IH
IL
VTM
VTO
Rd
IDRM /
IRRM
dV/dt
(dI/dt)c
VCL
VOUT = 12 V DC
RL = 33 Ω
VOUT = 12 V DC
RL = 33 Ω
VOUT = VDRM
IOUT = 100 mA
IG = 2 x IGtmax
IOUT = 5.6 A
QI - QII - QIII Tj = 25° C
QI - QII - QIII Tj = 25° C
RL = 3.3 Ω
Gate open
tp = 380 µs
Tj = 125° C
Tj = 25° C
Tj = 25° C
Tj = 25° C
Tj = 125° C
Tj = 125° C
VOUT = 700 V
Tj = 25° C
Tj = 125° C
VOUT = 460 V
Gate open
(dI/dt)c = 15 V/ µs
Tj = 110° C
Tj = 125° C
ICL = 1mA
tp = 1ms
Tj = 25° C
MAX
MAX
MIN
MAX
MAX
MAX
MAX
MAX
MAX
MAX
MIN
MIN
TYP
10
25
1
1.1
0.2
20
35
40
60
1.5
0.90
100
10
500
200
500
2.0
2.5
1100
mA
V
V
mA
mA
V
V
mΩ
µA
V/µs
A/ms
V
3/13
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