ACST4 Просмотр технического описания (PDF) - STMicroelectronics
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ACST4 Datasheet PDF : 13 Pages
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Characteristics
1
Characteristics
ACST4
Table 1.
Absolute ratings (limiting values)
For either positive or negative polarity of pin OUT voltage in respect to pin COM voltage
Symbol
Parameter
Value
Unit
VDRM/VRRM Repetitive peak off-state voltage
Tj = -10° C
IT(RMS)
RMS on-state current full cycle sine
wave 50 to 60 Hz
DPAK, IPAK Tc = 110° C
TO-220FPAB Tc = 100° C
Non repetitive surge peak on-state current
ITSM
Tj initial = 25° C, full cycle sine wave
I2t
Fusing capability
F = 50 Hz
F = 60 Hz
tp = 10 ms
dI/dt
Repetitive on-state current critical rate of
rise IG = 10 mA (tr < 100 ns)
Tj = 125° C
F = 120 Hz
VPP
Non repetitive line peak pulse voltage(1)
Tstg
Storage temperature range
Tj
Operating junction temperature range
Tl
Maximum lead soldering temperature during 10 s
1. according to test described by IEC 61000-4-5 standard and Figure 3.
700
4
30
33
6.4
50
2
- 40 to + 150
- 30 to + 125
260
V
A
A
A
A2s
A/μs
kV
°C
°C
°C
Table 2. Gate characteristics (maximum values)
Symbol
Parameter
PG(AV)
PGM
IGM
Average gate power dissipation
Peak gate power dissipation (tp = 20 µs)
Peak gate current (tp = 20 µs)
Value
Unit
0.1
W
10
A
1
V
Table 3. Thermal resistances
Symbol
Parameter
Rth (j-a) Junction to ambient
S(1) = 0.5 cm2 DPAK, IPAK
TO-220FPAB
Rth (j-l)
Junction to tab/lead for full cycle sine wave
conduction
DPAK, IPAK
TO-220FPAB
1. S = Copper surface under Tab
Value
70
60
2.6
4.6
Unit
° C/W
° C/W
° C/W
° C/W
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