ACS1026T Просмотр технического описания (PDF) - STMicroelectronics
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ACS1026T Datasheet PDF : 11 Pages
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Characteristics
ACS102-6T
Figure 3.
Relative variation of junction to
ambient thermal impedance vs
pulse duration and package
K=[Zth(j-a)/Rth(j-a)]
1.E+00
Figure 4.
Relative variation of gate trigger
current, holding current and
latching current vs junction
temperature
IGT, IH, IL [Tj] / IGT, IH, IL [Tj=25°C]
2.5
1.E-01
TO-92
SO-8
1.E-02
1.E-03
1.E-02
1.E-01
tP (S)
1.E+00 1.E+01 1.E+02 1.E+03
2.0
IGT
1.5
IL & IH
1.0
0.5
Tj(°C)
0.0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Figure 5.
Non repetitive surge peak on-state Figure 6.
current vs number of cycles
Non repetitive surge peak on-state
current for a sinusoidal pulse with
width tp<10 ms, and corresponding
value of I²t (Tj initial = 25° C).
ITSM(A)
10
9
8
7
Non repetitive
Tj initial=25°C
6
5
4
Repetitive
3
Tamb=100°C
2
1
0
1
10
t=20ms
One cycle
ITSM(A), I²t (A²s)
1.E+03
1.E+02
1.E+01
1.E+00
Number of cycles
100
1000
1.E-01
0.01
tp(ms)
0.10
Tj initial=25°C
ITSM
I²t
1.00
10.00
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