ACS1026T Просмотр технического описания (PDF) - STMicroelectronics
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ACS1026T Datasheet PDF : 11 Pages
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Characteristics
1
Characteristics
ACS102-6T
Table 1.
Symbol
Absolute maximum ratings (Tamb = 25° C, unless otherwise specified)
Parameter
Value
IT(RMS) RMS on-state current (full sine wave)
ITSM
Non repetitive surge peak on-state current
(full cycle sine wave, Tj initial = 25° C)
TO-92
SO-08
f = 60 Hz
f = 50 Hz
Tamb = 100° C
Tamb = 100° C
t = 16.7 ms
t = 20 ms
I²t I²t Value for fusing
tp = 10 ms
dI/dt
VPP
Critical rate of rise of on-state current
IG = 2xIGT, tr ≤ 100 ns
Non repetitive line peak mains voltage(1)
f = 120 Hz
Tj = 125° C
Tj = 25° C
IGM Peak gate current
tp = 20 µs Tj = 125° C
VGM Peak positive gate voltage
Tj = 125° C
PG(AV) Average gate power dissipation
Tj = 125° C
Tstg Storage junction temperature range
Tj Operating junction temperature range
1. according to test described by IEC 61000-4-5 standard and Figure 16
0.2
7.6
7.3
0.38
50
2
1
10
0.1
-40 to +150
-30 to +125
Unit
A
A
A²s
A/µs
kV
A
V
W
°C
Table 2. Electrical characteristics (Tj = 25° C, unless otherwise specified)
Symbol
Test conditions
Quadrant
IGT (1)
VGT
VOUT = 12 V, RL = 33 Ω
II - III
II - III
MAX
MAX
VGD
IH (2)
IL(2)
dV/dt (2)
(dI/dt)c (2)
VOUT = VDRM, RL =3.3 kΩ, Tj = 125° C
II - III
IOUT = 100 mA
IG = 1.2 x IGT
VOUT = 67% VDRM, gate open, Tj = 125° C
Without snubber (15 V/µs), turn-off time ≤ 20 ms, Tj = 125° C
MIN
MAX
MAX
MIN
MIN
VCL
ICL = 0.1 mA, tp = 1 ms, Tj = 125° C
MIN
1. minimum IGT is guaranteed at 10% of IGT max
2. for both polarities of OUT referenced to COM
Value
5
0.9
0.15
20
25
300
0.15
650
Unit
mA
V
V
mA
mA
V/µs
A/ms
V
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