RF1S22N10SM9A Просмотр технического описания (PDF) - Intersil
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RF1S22N10SM9A Datasheet PDF : 6 Pages
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RFP22N10, RF1S22N10SM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 1MΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
RFP22N10,
RF1S22N10SMS
100
100
±20
22
50
100
0.67
-55 to 175
300
260
UNITS
V
V
V
A
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
SYMBOL
TEST CONDITIONS
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
t(ON)
td(ON)
tr
td(OFF)
ID = 250µA, VGS = 0 (Figure 7)
VGS = VDS, ID = 250µA (Figure 9)
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TC = 150oC
VGS = ±20V, VDS = 0
ID = 22A, VGS = 10V (Figure 8)
VDD = 50Vwwwwwwwww, ID = 11A,
RL = 4.5Ω, VGS = 10V,
RGS = 25Ω
(Figure 11)
tf
t(OFF)
QG(TOT)
QG(10)
QG(TH)
RθJC
RθJA
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
TO-220 and TO-263
VDD = 80V, ID ≈ 22A,
RL = 3.64Ω
Ig(REF) = 1mA
(Figure 11)
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD ISD = 22A
Diode Reverse Recovery Time
trr
ISD = 22A, dISD/dt = 100A/µs
NOTE:
2. Pulse Test: Pulse Duration = 300µs maximum, duty cycle = 2%.
MIN TYP MAX UNITS
100
-
-
V
2
-
4
V
-
-
1
µA
-
-
50
µA
-
-
±100 nA
-
-
0.080
Ω
-
-
60
ns
-
13
-
ns
-
24
-
ns
-
65
-
ns
-
18
-
ns
-
-
120
ns
-
-
150
nC
-
-
75
nC
-
-
3.5
nC
-
-
1.5 oC/W
-
-
62
oC/W
MIN TYP MAX UNITS
-
-
1.5
V
-
-
200
ns
4-500
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