GM17CS18163CLT-5 Просмотр технического описания (PDF) - Hynix Semiconductor

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производитель

GM17CS18163CLT-5

1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM

Hynix Semiconductor 

EDO Page Mode Cycle

Symbol

Parameter

tHPC

tRASP

tACP

tRHCP

tDOH

tCOL

tCOP

tRCHP

EDO Page Mode Cycle Time

EDO Page Mode RAS Pulse Width

Access Time from CAS Precharge

RAS Hold Time from CAS Precharge

Output data Hold Time from CAS low

CAS Hold Time referred OE

CAS to OE Setup Time

Read command Hold Time

from CAS Precharge

GM71C18163C

GM71CS18163CL

GM71C(S)18163 GM71C(S)18163 GM71C(S)18163

C/CL-5

C/CL-6

C/CL-7

Min Max Min Max Min Max

Unit

Note

20 - 25 - 30 -

ns

25

- 100,000 - 100,000 - 100,000 ns

16

- 30 - 35 - 40 ns 9,17,22

30 - 35 - 40 -

ns

3- 3- 3

ns

9

7 - 10 - 13

ns

5- 5- 5

ns

30 - 35 - 40

ns

EDO Page Mode Read-Modify-Write Cycle

Symbol

Parameter

GM71C(S)18163 GM71C(S)18163 GM71C(S)18163

C/CL-5

C/CL-6

C/CL-7

Min Max Min Max Min Max

Unit

tHPRWC

tCPW

EDO Page Mode Read-Modify-Write

Cycle Time

WE Delay Time from CAS Precharge

57 - 68 - 79 -

ns

45 - 54 - 62 -

ns

Note

14,22

Refresh

Symbol

Parameter

tREF

Refresh period

tREF

Refresh period (L -Series)

GM71C(S)18163 GM71C(S)18163 GM71C(S)18163

C/CL-5

C/CL-6

C/CL-7

Min Max Min Max Min Max

Unit

- 16 - 16 - 16 ms

- 128 - 128 - 128 ms

Note

1024

cycles

1024

cycles

Rev 0.1 / Apr’01

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