DSF8025SG25 Просмотр технического описания (PDF) - Dynex Semiconductor

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Компоненты Описание

производитель

DSF8025SG25

Fast Recovery Diode

Dynex Semiconductor 

DSF8025SE / DSF8025SG

CHARACTERISTICS

Symbol

Parameter

V

FM

IRM

trr

QRA1

IRR

K

Forward voltage

Peak reverse current

Reverse recovery time

Recovered charge (50% chord)

Reverse recovery current

Soft factor

V

TO

Threshold voltage

rT

Slope resistance

VFRP

Peak forward recovery voltage

Conditions

At 1000A peak, T = 25oC

case

At V , T = 150oC

RRM case

I

F

=

1000A,

di /dt

RR

=

100A/µs

T = 150oC, V = 100V

case

R

At Tvj = 150oC

At Tvj = 150oC

di/dt = 1000A/µs, Tj = 125oC

DEFINITION OF K FACTOR AND QRA1

dIR/dt

t1

0.5x IRR

IRR

QRA1 = 0.5x IRR(t1 + t2)

t2 k = t1/t2

τ

Typ. Max. Units

-

2.3

V

-

50 mA

-

5.0 µs

-

540 µC

-

235

A

1.8

-

-

-

1.48 V

-

0.8 mΩ

70

-

V

3/8

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