DSF8025SE25(2000) Просмотр технического описания (PDF) - Dynex Semiconductor

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производитель

DSF8025SE25
(Rev.:2000)

Fast Recovery Diode

Dynex Semiconductor 

100000

10000

IF

∫ 50µs

QS = 0

tp = 1ms

dIR/dt

QS

IRR

Conditions:

Tj = 150˚C,

VR = 100V

DSF8025SE

1000

IF = 2000A

IF = 1000A

IF = 200A

100

10

10000

100

1000

Rate of rise of reverse current dIR/dt - (A/µs)

Fig. 4 Recovered charge

10000

Conditions:

Tj = 150˚C,

VR = 100V

1000

A

B

C

100

A: IF = 2000A

B: IF = 1000A

C: IF = 200A

10

1

10

100

1000

Rate of rise of reverse current dIR/dt - (A/µs)

Fig. 5 Typical reverse recovery current vs rate of fall of forward current

5/8

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