DSF8025SE(2000) Просмотр технического описания (PDF) - Dynex Semiconductor

Номер в каталоге

Компоненты Описание

производитель

DSF8025SE
(Rev.:2000)

Fast Recovery Diode

Dynex Semiconductor 

DSF8025SE

SURGE RATINGS

Symbol

Parameter

I

Surge (non-repetitive) forward current

FSM

I2t

I2t for fusing

IFSM

Surge (non-repetitive) forward current

I2t

I2t for fusing

Conditions

10ms half sine; with 0% VRRM, Tj = 150oC

10ms half sine; with 50% VRRM, Tj = 150oC

Max. Units

7.5

kA

281 x 103 A2s

6.0

kA

180 x 103 A2s

THERMAL AND MECHANICAL DATA

Symbol

Parameter

Rth(j-c) Thermal resistance - junction to case

Rth(c-h) Thermal resistance - case to heatsink

Tvj

Virtual junction temperature

Tstg

Storage temperature range

-

Clamping force

CHARACTERISTICS

Symbol

Parameter

VFM

Forward voltage

I

Peak reverse current

RRM

trr

Reverse recovery time

QRA1

Recovered charge (50% chord)

IRM

Reverse recovery current

K

Soft factor

VTO

r

T

VFRM

Threshold voltage

Slope resistance

Forward recovery voltage

Conditions

Double side cooled

Single side cooled

Clamping force 8.0kN

with mounting compound

dc

Anode dc

Cathode dc

Double side

Single side

On-state (conducting)

Min. Max. Units

- 0.047 oC/W

- 0.094 oC/W

- 0.094 oC/W

- 0.018 oC/W

- 0.036 oC/W

-

150

oC

-55 175

oC

7.0 9.0 kN

Conditions

At 1000A peak, Tcase = 25oC

At VRRM, Tcase = 150oC

IF = 1000A, diRR/dt = 100A/µs

Tcase = 150oC, VR = 100V

At T = 150oC

vj

At T = 150oC

vj

di/dt = 1000A/µs, Tj = 125oC

Typ. Max. Units

-

2.3

V

-

50 mA

-

5.0 µs

-

540 µC

-

235

A

1.8

-

-

-

1.48 V

-

0.8 mΩ

70

-

V

2/8

Share Link: