NDS9410 Просмотр технического описания (PDF) - Fairchild Semiconductor
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NDS9410 Datasheet PDF : 8 Pages
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Typical Characteristics
30
VGS = 10V
25
6.0V
20 5.0V
15 4.5V
10
4.0V
3.5V
3.0V
5
2.5V
0
0
0.5
1
1.5
2
2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.8
1.6
ID = 7.3A
VGS = 10V
1.4
1.2
1
0.8
0.6
0.4
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
30
VDS = 5V
25
20
TA = -55oC
25oC
125oC
15
10
5
0
0.5
1.5
2.5
3.5
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
VGS = 3.0V
2
3.5V
1.5
4.0V
4.5V
5.0V
6.0V
1
10V
0.5
0
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.1
0.08
ID = 7.3 A
0.06
0.04
0.02
TA = 25oC
TA = 125oC
0
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25o
-55oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
NDS9410A Rev B(W)
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