SDM9926 Просмотр технического описания (PDF) - Samhop Mircroelectronics

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Компоненты Описание

производитель

SDM9926

Dual N-Channel Enhancement Mode Field Effect Transistor

Samhop Mircroelectronics 

S DM9926

E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted)

P a ra meter

OFF CHARACTERISTICS

Drain-S ource Breakdown Voltage

Zero Gate Voltage Drain C urrent

Gate-Body Leakage

ON CHARACTERISTICS b

Gate Threshold Voltage

S ymbol

BVDSS

IDSS

IGSS

V G S (th)

Drain-S ource On-S tate R esistance R DS(ON)

Forward Transconductance

gFS

DYNAMIC CHARACTERISTICS c

Input Capacitance

C IS S

Output Capacitance

COSS

R everse Transfer Capacitance

CRSS

SWITCHING CHARACTERISTICS c

Turn-On Delay Time

tD(ON)

R ise Time

tr

Turn-Off Delay Time

tD(O F F )

Fall Time

tf

Total Gate C harge

Qg

Gate-S ource Charge

Qgs

Gate-Drain C harge

Qgd

C ondition

VGS =0V, ID =250uA

VDS =16V, VGS =0V

VGS = 10V,VDS=0V

VDS =VGS, ID = 250uA

VGS =4.0V, ID= 5A

VGS =2.5V, ID= 5A

VDS = 5.0V, ID= 6.0A

VDS =8V, VGS = 0V

f =1.0MHZ

VDD = 10V,

ID = 1A,

VGEN = 4.5V,

R L = 10 ohm

R GEN = 10 ohm

VDS =10V, ID = 1A,

VGS =4.5V

Min Typ C Max Unit

20

V

1 uA

100 nA

0.6

V

25 30 m ohm

35 40 m ohm

11

S

910

PF

190

PF

150

PF

35

ns

12

ns

46

ns

25

ns

14

nC

3

nC

2.5

nC

2

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