9N95 Просмотр технического описания (PDF) - Unisonic Technologies
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9N95 Datasheet PDF : 6 Pages
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9N95
Power MOSFET
ABSOLUTE MAXIMUM RATING (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
950
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current (TC = 25°C)
ID
9.0
A
Pulsed Drain Current (Note 2)
IDM
36
A
Avalanche Current (Note 2)
IAR
9.0
A
Avalanche Energy
Single Pulsed
(Note 3)
EAS
900
mJ
Repetitive(Note 2)
Peak Diode Recovery dv/dt (Note 4)
EAR
dv/dt
28
mJ
4.0
V/ns
Power Dissipation
TO-230
147
W
Linear Derating Factor
TO-247
TO-230
PD
160
1.176
W
W/°C
above TC = 25°C
TO-247
1.28
W/°C
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L = 21mH, IAS = 9.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤9.0A, di/dt ≤ 200A/μs, VDD≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-230
TO-247
Junction to Case
TO-230
TO-247
SYMBOL
θJA
θJC
RATINGS
62.5
50
0.85
0.78
UNIT
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-721.B
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