2SD2114KS Просмотр технического описания (PDF) - ROHM Semiconductor
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2SD2114KS Datasheet PDF : 4 Pages
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Transistors
2SD2114K / 2SD2144S
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVCBO 25
BVCEO 20
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
BVEBO 12
ICBO
−
IEBO
−
VCE(sat)
−
2SD2114K
820
DC current transfer ratio
hFE
2SD2144S
560
Transition frequency
fT∗
−
Output capacitance
Cob
−
Output On-resistance
∗ Measured using pulse current
Ron
−
Typ.
−
−
−
−
−
0.18
−
−
350
8.0
0.8
Max.
−
−
−
0.5
0.5
0.4
2700
2700
−
−
−
Unit
V
V
V
µA
µA
V
−
−
MHz
pF
pF
Conditions
IC=10µA
IC=1mA
IE=10µA
VCB=20V
VEB=10V
IC/IB=500mA/20mA
VCE=3V, IC=10mA
VCE=10V, IE=−50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
IB=1mA, Vi=100mV(rms), f=1kHz
zPackaging specifications and hFE
Package
Code
Type
Basic ordering
hFE unit (pieces)
2SD2114K VW
2SD2144S UVW
Taping
T146
TP
3000
5000
−
−
hFE values are classified as follows :
Item
U
V
W
hFE
560∼1200 820∼1800 1200∼2700
zElectrical characteristic curves
2.0
Ta=25˚C
1.6 2.0µA
1.8µA
1.2
1.6µA
1.4µA
1.2µA
1.0µA
0.8µA
0.8
0.6µA
0.4
0.4µA
0.2µA
0
IB=0
0
0.1
0.2
0.3
0.4
0.5
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
Fig.1 Grounded emitter output
characteristics(Ι)
1000
1.8mA 2.0mA
1.6mA
1.4mA
800
1.2mA
1.0mA
600
0.8mA
0.6mA
400
0.4mA
0.2mA
200
Ta=25°C
Measured using
0
IB=0mA pulse current.
0
2
4
6
8
10
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
Fig.2 Grounded emitter output
characteristics(ΙΙ)
1000
500
200
100
50
Ta=100°C
25°C
−25°C
VCE=3V
Measured using
pulse current.
20
10
5
2
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : VBE(V)
Fig.3 Grounded emitter propagation
characteristics
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