8550S Просмотр технического описания (PDF) - STANSON TECHNOLOGY

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Компоненты Описание

производитель

8550S

PNP TRANSISTOR

STANSON TECHNOLOGY 

PNP TRANSISTOR

-0.5A

8550S

Power Dissipation: 0.625W

Collector Current: -0.5A

Collector-Base Voltage: -45V

TO-92

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃）

PARAMETERS

SYMBOL MIN TYP MAX UNIT

Collector-Emitter Breakdown Voltage BVceo -25

V

CONDITION

Ic=-0.1mA

Collector-Base Breakdown Voltage BVcbo -45

V

Ic=-100uA

Emitter-Base Breakdown Voltage

BVebo -5

V

Ie=-100μA

Collector-Base Leakage

Icbo

-0.1 uA

Vcb=-40V

Collector-Emitter Leakage

Iceo

-0.1 uA

Vce=-20V

Emitter-Base Leakage

Iebo

-0.1 uA

Veb=-5V

Collector-Emitter Saturation Voltage Vce(sat)

-0.6 V Ic=-500mA, Ib=-50mA

Base-Emiiter Saturation Voltage

Vbe(sat)

-1.2 V Ic=-500mA, Ib=-50mA

DC Current Gain

Hfe1 85

300

Hfe2 50

Vce=-1V,Ic=-50mA

Vce=-1V,Ic=-500mA

Collector Current

Ic

-0.5 A

Peak Collector Current

Icp

-8 A(Pulse)

Current Gain Bandwidth

fT

150

MHz Vcb=-6V, Ic=-20mA

Output Capacitance

Cob

32 pF Vcb=-20V,Ie=0,f=1MHz

Power Dissipation

Pc

0.625 W

Junction Temperature

Tj

150 ℃

Storage Temperature

Tstg -55

150 ℃

Hfe1 Classification

Rank

Range

B

85-160

C

120-200

D

160-300

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

TEL: (650) 9389294 FAX: (650) 9389295

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