7N60A Просмотр технического описания (PDF) - Unisonic Technologies
Номер в каталоге
Компоненты Описание
производитель
7N60A Datasheet PDF : 7 Pages
| |||
7N60A
TYPICAL CHARACTERISTICS
Power MOSFET
ON Resistance vs. Drain Current
2.5
Note:
1. Td=25°C
2.0 2. Pulsed test
VGS=10V
1.5
VGS=20V
1.0
0.8
0
0
5
10
15
20
25
Drain Current, ID (A)
10000
Capacitance vs. Drain Source Voltage
1000
CISS
100
COSS
10 Note:
1. VGS: 0V
2. f = 1MHz
3. TC = 25°C
1
CRSS
0.1
1
10
100
Drain Source Voltage, VDS (A)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Reverse Drain Current vs.
Source Drain Voltage
Note:
1. VDS=10V
2. Pulse test
101
100
10-1
0.4
0.6
0.8
1.0 8 1.2 1.4
Source Drain Voltage, VSD (V)
Gate Source Voltage vs. Total Gate Charge
Note:
1. ID = 7A
10
2. TC = 25°C
VDD = 80V
VDD = 200V
VDD = 300V
5
0
5 10 15 20 25 30 35
Total Gate Charge, QG (nC)
6 of 7
VQW-R502-111,D
Share Link: 