RF3V49092 Просмотр технического описания (PDF) - Intersil
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RF3V49092 Datasheet PDF : 13 Pages
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RF3V49092, RF3S49092SM
Electrical Specifications (P-Channel) TC = 25oC, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at -5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
SYMBOL
TEST CONDITIONS
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Qg(TOT)
Qg(-5)
Qg(TH)
CISS
COSS
CRSS
RθJC
RθJA
ID = 250µA, VGS = 0V, (Figure 34)
VGS = VDS, ID = 250µA, (Figure 33)
VDS = -12V,
VGS = 0V
TC = 25oC
TC = 150oC
VGS = ±10V
ID = 10A, VGS = -5V, (Figures 30, 32)
VDD = -6V, ID ≈ 10A, RL = 0.62Ω,
VGS = -5V, RGS = 25Ω
(Figure 31)
VGS = 0V to -10V
VGS = 0V to -5V
VGS = 0V to -1V
VDD = -9.6V,
ID = 10A,
RL = 1.0Ω
(Figure 36)
VDS = -10V, VGS = 0V, f = 1MHz
(Figure 35)
TS-001AA, and MO-169AB
P-Channel Source to Drain Diode Specifications
PARAMETER
Source to Drain Voltage
Reverse Recovery Time
SYMBOL
TEST CONDITIONS
VSD
trr
ISD = -10A
ISD = -10A, dISD/dt = -100A/µs
MIN
TYP MAX UNITS
-12
-
-
V
-1
-
-
V
-
-
-1
µA
-
-
-50
µA
-
-
±100
nA
-
-
0.140
Ω
-
-
115
ns
-
25
-
ns
-
65
-
ns
-
40
-
ns
-
45
-
ns
-
-
110
ns
-
19
24
nC
-
10
14
nC
-
0.8
1.1
nC
-
775
-
pF
-
550
-
pF
-
150
-
pF
-
-
3.00
oC/W
-
-
62
oC/W
MIN
TYP MAX UNITS
-
-
-1.5
V
-
-
100
ns
Typical Performance Curves (N-Channel)
1.2
25
1.0
20
0.8
15
0.6
10
0.4
0.2
5
0
0
25
50
75
100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
4-32
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