RF3S49092SM Просмотр технического описания (PDF) - Intersil
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RF3S49092SM Datasheet PDF : 13 Pages
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RF3V49092, RF3S49092SM
Absolute Maximum Ratings TC = 25oC Unless Otherwise Specified
N-CHANNEL
P-CHANNEL
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . VDSS
12
-12
V
Drain to Gate Voltage (RGS = 20kΩ, Note 1) . . . . . . . . .VDGR
12
-12
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±10
±10
V
Drain Current
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
20
10
A
Pulsed (Figures 5, 26) . . . . . . . . . . . . . . . . . . . . . . . . . IDM Refer to Peak Current Curve
Refer to Peak Current Curve
Pulsed Avalanche Rating (Figures 6, 27). . . . . . . . . . . . . EAS
Refer to UIS Curve
Refer to UIS Curve
Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
50
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.33
50
W
0.33
W/oC
Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG
-55 to 175
-55 to 175
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . TL
300
Package Body for 10s, See Techbrief 334 . . . . . . . . . .Tpkg
260
300
oC
260
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications (N-Channel) TC = 25oC, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
SYMBOL
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Qg(TOT)
Qg(5)
Qg(TH)
CISS
COSS
CRSS
RθJC
RθJA
TEST CONDITIONS
ID = 250µA, VGS = 0V, (Figure 13)
VGS = VDS, ID = 250µA, (Figure 12)
VDS = 12V,
VGS = 0V
TC = 25oC
TC = 150oC
VGS = ±10V
ID = 20A, VGS = 5V, (Figure 9, 11)
VDD = 6V, ID ≈ 20A, RL = 0.24Ω,
VGS = 5V, RGS = 25Ω
(Figure 10)
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 9.6V,
ID = 20A,
RL = 0.42Ω
(Figure 15)
VDS = 10V, VGS = 0V, f = 1MHz
(Figure 14)
TS-001AA, and MO-169AB
MIN
TYP
MAX UNITS
12
-
-
V
1
-
-
V
-
-
1
µA
-
-
50
µA
-
-
±100
nA
-
-
0.060
Ω
-
-
100
ns
-
18
-
ns
-
60
-
ns
-
50
-
ns
-
60
-
ns
-
-
140
ns
-
20
25
nC
-
12
15
nC
-
0.9
1.2
nC
-
750
-
pF
-
700
-
pF
-
275
-
pF
-
-
3.00
oC/W
-
-
62
oC/W
N-Channel Source to Drain Diode Specifications
PARAMETER
Source to Drain Voltage
Reverse Recovery Time
SYMBOL
TEST CONDITIONS
VSD
trr
ISD = 20A
ISD = 20A, dISD/dt = 100A/µs
MIN
TYP
MAX UNITS
-
-
1.5
V
-
-
100
ns
4-31
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