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HUFA75321D3ST Просмотр технического описания (PDF) - Fairchild Semiconductor

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Компоненты Описание
производитель
HUFA75321D3ST
Fairchild
Fairchild Semiconductor Fairchild
HUFA75321D3ST Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
HUFA75321D3, HUFA75321D3S
PSPICE Electrical Model
.SUBCKT HUFA75321D 2 1 3 ; rev 4/29/98
CA 12 8 9.96e-10
CB 15 14 9.83e-10
CIN 6 8 6.18e-10
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 59.54
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
GATE
1
LDRAIN 2 5 1e-9
LGATE 1 9 3.57e-9
LSOURCE 3 7 4.25e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 5.50e-3
RGATE 9 20 2.25
RLDRAIN 2 5 10
RLGATE 1 9 35.7
RLSOURCE 3 7 42.5
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 16.30e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
DPLCAP 5
10
RSLC2
RSLC1
51
5
51
ESLC
DBREAK
11
LDRAIN
DRAIN
2
RLDRAIN
-
LGATE
ESG
6
8
+
EVTHRES
+ 19 -
EVTEMP
8
RGATE + 18 - 6
9
20 22
RLGATE
CIN
S1A
12 13
8
S2A
14
15
13
50
RDRAIN
16
21
+
17
EBREAK 18
-
MWEAK
DBODY
MMED
MSTRO
8
7
RSOURCE
LSOURCE
SOURCE
3
RLSOURCE
RBREAK
17
18
S1B
S2B
CA
13
CB
+
+ 14
EGS
6
8
-
EDS
5
8
-
RVTEMP
19
IT
-
VBAT
+
8
22
RVTHRES
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*101),2.5))}
.MODEL DBODYMOD D (IS = 7.47e-13 RS = 6.45e-3 TRS1 = 2.01e-3 TRS2 = 1.21e-6 CJO = 1.02e-9 TT = 3.21e-8 M = 0.50)
.MODEL DBREAKMOD D (RS = 2.01e- 1TRS1 = 3.62e- 3TRS2 = 6.01e-7)
.MODEL DPLCAPMOD D (CJO = 9.0e-1 0IS = 1e-3 0N = 10 M = 0.85)
.MODEL MMEDMOD NMOS (VTO = 3.25 KP = 1.75 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 2.25)
.MODEL MSTROMOD NMOS (VTO = 3.65 KP = 32.00 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 2.91 KP = 0.07 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 22.5 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 1.05e- 3TC2 = 1.21e-7)
.MODEL RDRAINMOD RES (TC1 = 2.40e-2 TC2 = 1.02e-6)
.MODEL RSLCMOD RES (TC1 = 2.07e-4 TC2 = 4.67e-5)
.MODEL RSOURCEMOD RES (TC1 = 0 TC2 =0)
.MODEL RVTHRESMOD RES (TC = -3.01e-3 TC2 = -8.85e-6)
.MODEL RVTEMPMOD RES (TC1 = -1.96e- 3TC2 = 1.39e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -7.85 VOFF= -4.85)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.85 VOFF= -7.85)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.00 VOFF= 3.00)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 3.00 VOFF= 0.00)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
©2001 Fairchild Semiconductor Corporation
HUFA75321D3, HUFA75321D3S Rev. B

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