HGTG20N50C1D Просмотр технического описания (PDF) - Intersil
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HGTG20N50C1D Datasheet PDF : 5 Pages
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Specifications HGTG20N50C1D
Electrical Specifications TC = +25oC, Unless Otherwise Specified
LIMITS
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
MAX UNITS
Collector-Emitter Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current
Collector-Emitter On-Voltage
Gate-Emitter Plateau Voltage
On-State Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Energy Loss Per Cycle (Off Switching
Dissipation = WOFF x Frequency)
Thermal Resistance Junction-to-Case (IGBT)
Thermal Resistance of Diode
Diode Forward Voltage
Diode Reverse Recovery Time
BVCES
VGE(TH)
ICES
IGES
VCE(SAT)
VGEP
QG(ON)
tD(ON)I
tRI
tD(OFF)I
tFI
WOFF
RθJC
RθJC
VEC
tRR
IC = 1mA, VGE = 0V
500
-
VGE = VCE, IC = 1mA
2
4.5
VCE = 500V
TC = +125oC, VCE = 500V
-
250
-
1000
VGE = ±20V, VCE = 0V
-
100
IC = 20A, VGE = 10V
-
2.5
IC = 35A, VGE = 20V
-
3.2
IC = 10A, VCE = 10V
-
6 (Typ)
IC = 10A, VCE = 10V
-
33 (Typ)
IC = 20A, VCE(CLP) = 300V, L = 25µH,
-
50
TJ = +100oC, VGE = 10V, RG = 25Ω
-
50
-
400
400 (Typ) 500
IC = 20A, VCE(CLP) = 300V, L = 25µH,
TJ = +100oC, VGE = 10V, RG = 25Ω
1070 (Typ)
-
1.25
-
1.5
IEC = 20A
IEC = 20A, diEC/dt = 100A/µs
-
1.8
-
60
V
V
µA
µA
nA
V
V
V
nC
ns
ns
ns
ns
µJ
oC/W
ns
V
ns
Typical Performance Curves
100
80
60
40
20
0
+25 +50 +75 +150 +100 +125
TC, CASE TEMPERATURE (oC)
FIGURE 1. POWER DISSIPATION vs TEMPERATURE
DERATING CURVE
+150
VGE = VCE, IC = 1mA
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-50
0
+50
+100
+150
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 2. TYPICAL NORMALIZED GATE-THRESHOLD
VOLTAGE vs JUNCTION TEMPERATURE
3-72
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