G20N50E1D Просмотр технического описания (PDF) - Intersil
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G20N50E1D Datasheet PDF : 6 Pages
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HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D
Typical Performance Curves (Continued)
1000
900
800
VGE = 10V, VCE(CLP) = 300V
L = 25µH, RG = 25Ω
700
20A, 40E1D/50E1D
600
500
20A, 40C1D/50C1D
400
300
10A, 40E1D/50E1D
200
10A, 40C1D/50C1D
100
0
+25
+50
+75
+100
+125
+150
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 13. TYPICAL CLAMPED INDUCTIVE TURN-OFF
SWITCHING LOSS/CYCLE
100
500
10
VCC = BVCES
8
375
GATE
EMITTER
VOLTAGE
6
250
VCC = 0.25 BVCES
RL = 25Ω
4
IG(REF) = 0.76mA
125
VGE = 10V
2
COLLECTOR-EMITTER VOLTAGE
0
IG(REF)
20
IG(ACT)
0
IG(REF)
TIME (µs)
80
IG(ACT)
NOTE: For Turn-Off gate currents in excess of 3mA. VCE Turn-Off
is not accurately represented by this normalization.
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS AT CON-
STANT GATE CURRENT (REFER TO APPLICATION
NOTES AN7254 AND AN7260)
TYPICAL REVERSE RECOVERY TIME
10
TJ = +150oC
TJ = +100oC
1.0
TJ = +25oC
TJ = -50oC
0.1
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VEC, EMITTER-COLLECTOR VOLTAGE (V)
FIGURE 15. TYPICAL DIODE EMITTER-COLLECTOR
VOLTAGE vs CURRENT
60
50
40
dIEC/dt ≥ 100A/µs
30
VR = 30V, TJ = +25oC
20
10
0 2 4 6 8 10 12 14 16 18 20
IEC, EMITTER-COLLECTOR CURRENT (A)
FIGURE 16. TYPICAL DIODE REVERSE RECOVERY TIME
Test Circuit
1/RG = 1/RGEN + 1/RGE
RGEN = 50Ω
20V
0V
RL = 4Ω
L = 25µH
VCC
VCE(CLP) =
300V
100V
RGE = 50Ω
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT
3-80
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