HGTH20N40E1D Просмотр технического описания (PDF) - Intersil
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HGTH20N40E1D Datasheet PDF : 6 Pages
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HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D
Typical Performance Curves
40
VGE = 10V, RGEN = RGS = 50Ω
35
30
25
20
15
10
5
0
-75 -50 -25 0 +25 +50 +75 +100 +125 +150 +175
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 1. MAX. SWITCHING CURRENT LEVEL. RG = 50Ω,
VGE = 0V ARE THE MIN. ALLOWABLE VALUES
VGE = VCE, IC = 1mA
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-50
0
+50
+100
+150
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD VOLT-
AGE vs JUNCTION TEMPERATURE
100
80
60
40
20
0
+25 +50 +75 +100 +125 +150
TC, CASE TEMPERATURE (oC)
FIGURE 2. POWER DISSIPATION vs TEMPERATURE
DERATING CURVE
35
VCE = 10V, PULSE TEST
30 PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
25
20
15
+25oC
10
+125oC
5
-40oC
0
2.5
5.0
7.5
10
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 4. TYPICAL TRANSFER CHARACTERISTICS
35
VGE = 20V
30
VGE = 10V
25
VGE = 8V
20
VGE = 7V
VGE = 6V
15
VGE = 5V
10
VGE = 4V
5
TC = +25oC
0
1
2
3
4
5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
VGE = 10V, PULSE TEST
35 PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
30
25
+25oC
20
15
10
5
0
1
2
3
4
VCE(ON), COLLECTOR-TO-EMITTER ON VOLTAGE (V)
FIGURE 6. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE
vs COLLECTOR CURRENT
3-78
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