G20N40C1D Просмотр технического описания (PDF) - Intersil
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G20N40C1D Datasheet PDF : 6 Pages
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Specifications HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D
Electrical Specifications TC = +25oC, Unless Otherwise Specified
LIMITS
HGTH20N40C1D,
HGTH20N40E1D
HGTH20N50C1D,
HGTH20N50E1D
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX UNITS
Collector-Emitter Breakdown Voltage
BVCES IC = 1mA, VGE = 0
400
-
500
-
V
Gate Threshold Voltage
VGE(TH) VGE = VCE, IC = 1mA
2.0
4.5
2.0
4.5
V
Zero Gate Voltage Collector Current
ICES
VCE = 400V, TC = +25oC
-
250
-
-
µA
VCE = 500V, TC = +25oC
-
-
-
250
µA
VCE = 400V, TC = +125oC
-
1000
-
-
µA
VCE = 500V, TC = +125oC
-
-
-
1000
µA
Gate-Emitter Leakage Current
IGES
VGE = ±20V, VCE = 0
-
100
-
100
nA
Collector-Emitter On Voltage
VCE(ON) IC = 20A, VGE = 10V
-
2.5
-
2.5
V
IC = 35A, VGE = 20V
-
3.2
-
3.2
V
Gate-Emitter Plateau Voltage
VGEP
IC = 10A, VCE = 10V
-
6 (Typ)
-
6 (Typ)
V
On-State Gate Charge
QG(ON) IC = 10A, VCE = 10V
-
33 (Typ)
-
33 (Typ) nC
Turn-On Delay Time
Rise Time
tD(ON)I IC = 20A, VCE(CLP) = 300V,
-
50
-
50
ns
L = 25µH, TJ = +100oC,
tRI
VGE = 10V, RG = 25Ω
-
50
-
50
ns
Turn-Off Delay Time
tD(OFF)I
-
400
-
400
ns
Fall Time
tFI
40E1D, 50E1D
680
1000
680
1000
ns
(Typ)
(Typ)
40C1D, 50C1D
400
500
400
500
ns
(Typ)
(Typ)
Turn-Off Energy Loss per Cycle
(Off Switching Dissipation = WOFF x
Frequency)
WOFF
IC = 20A, VCE(CLP) = 300V,
L = 25µH, TJ = +100oC,
VGE = 10V, RG = 25Ω
40E1D, 50E1D
1810 (Typ)
µJ
40C1D, 50C1D
Thermal Resistance Junction-to-Case
RθJC
-
Diode Forward Voltage
VEC
IEC = 20A
-
Diode Reverse Recovery Time
tRR
IEC = 20A, dIEC/dt = 100A/µs
-
1070 (Typ)
1.25
-
2
-
100
-
1.25
2
100
µJ
oC/W
V
ns
3-77
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