74HC3G14 Просмотр технического описания (PDF) - Philips Electronics

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74HC3G14

Inverting Schmitt-triggers

Philips Electronics 

Philips Semiconductors

Inverting Schmitt-triggers

Product specification

74HC3G14; 74HCT3G14

FEATURES

• Wide supply voltage range from 2.0 to 6.0 V

• High noise immunity

• Low power dissipation

• Balanced propagation delays

• Unlimited input rise and fall times

• Very small 8 pins package

• ESD protection:

HBM EIA/JESD22-A114-A exceeds 2000 V

MM EIA/JESD22-A115-A exceeds 200 V.

• Specified from −40 to +85 °C and −40 to +125 °C.

APPLICATIONS

• Wave and pulse shapers for highly noisy environments

• Astable multivibrators

• Monostable multivibrators

• Output capability: standard.

DESCRIPTION

The 74HC3G/HCT3G14 is a high-speed Si-gate CMOS

device.

The 74HC3G/HCT3G14 provides three inverting buffers

with Schmitt-trigger action. This device is capable of

transforming slowly changing input signals into sharply

defined, jitter-free output signals.

QUICK REFERENCE DATA

GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns.

SYMBOL

PARAMETER

CONDITIONS

TYPICAL

UNIT

HC3G14 HCT3G14

tPHL/tPLH propagation delay nA to nY

CL = 50 pF; VCC = 4.5 V 16

21

ns

CI

input capacitance

2

2

pF

CPD

power dissipation capacitance per buffer notes 1 and 2

10

10

pF

Notes

1. CPD is used to determine the dynamic power dissipation (PD in µW).

PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in Volts;

N = total switching outputs;

Σ(CL × VCC2 × fo) = sum of the outputs.

2. For HC3G14 the condition is VI = GND to VCC.

For HCT3G14 the condition is VI = GND to VCC − 1.5 V.

2003 Nov 04

2

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