74HC2G02DP Просмотр технического описания (PDF) - Philips Electronics

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74HC2G02DP

Dual 2-input NOR gate

Philips Electronics 

Philips Semiconductors

Dual 2-input NOR gate

Product specification

74HC2G02; 74HCT2G02

FEATURES

• Wide supply voltage range from 2.0 to 6.0 V

• Symmetrical output impedance

• High noise immunity

• Low power dissipation

• Balanced propagation delays

• Very small 8 pins package

• Output capability is standard

• ESD protection:

HBM EIA/JESD22-A114-A exceeds 2000 V

MM EIA/JESD22-A115-A exceeds 200 V.

• Specified from −40 to +85 °C and −40 to +125 °C.

DESCRIPTION

The 74HC2G/HCT2G02 is a high-speed Si-gate CMOS

device.

The 74HC2G/HCT2G02 provides the 2-input NOR

function.

QUICK REFERENCE DATA

GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns.

SYMBOL

PARAMETER

CONDITIONS

tPHL/tPLH

CI

CPD

propagation delay nA, nB to nY

CL = 15 pF; VCC = 5 V

input capacitance

power dissipation capacitance per gate notes 1 and 2

Notes

1. CPD is used to determine the dynamic power dissipation (PD in µW).

PD = CPD × VCC2 × fi × N + ∑ (CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in Volts;

N = total load switching outputs;

∑ (CL × VCC2 × fo) = sum of outputs.

2. For 74HC2G02 the condition is VI = GND to VCC.

For 74HCT2G02 the condition is VI = GND to VCC − 1.5 V.

TYPICAL

HC2G02 HCT2G02

UNIT

9

12

ns

1.5

1.5

pF

10

10

pF

2003 May 14

2

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